group-IV LASer and deTectors on Si-TEchnology Platform

Digital, Industry & SpaceHORIZON-RIAID: 101070208
EC Contribution
€41,811
Consortium Size
9 orgs
Start Year
2023
Summary

Photonics plays a key role in many applications, such as a detection of environmental or toxic gases, analyses of food or health-related products. Those applications depend on the development of highly advanced photonic components working in the mid-infrared (MIR) wavelength range. These components have always been difficult and expensive to make, as they are not compatible with standard microelectronic or photonic fabrication processes.LASTSTEP ambitions to address this issue by developing the world-first all-Group-IV photonic platform using silicon-germanium-tin alloys (SiGeSn). Focusing on the MIR 2-5 m region essential for sensing of chemical species, the project aims to ensure a wide scale adoption of the developed technology by offering a fully monolithic solution compatible with standard state-of-the-art 200mm CMOS manufacturing processes. The approach will enable cost-effective solutions for sensing, but also for autonomous navigation or consumer products.To achieve this objective, LASTSTEP gathers a world class consortium composed of 3 academic partners, 2 RTOs and 3 industrials. The partners are: -leaders of a CMOS compatible technology for growth and processing of GeSn direct bandgap alloys in an industry-relevant environment- two SMEs well-established on the markets of gas and liquid sensing - world leading PIC design and test-house company to ensure further exploitation of results.LASTSTEP will develop four prototypes based on the fully-group-IV photonic platform for two use-cases. Prototypes will first be assembled from discrete components, then integrated on PICs.LASTSTEP aims to secure for Europe an outstanding position in development and economic exploitation of Si photonics, thereby anticipating maximal return on investment for the EU society. LASTSTEP will bring the decisive further development of Si photonics into a technologically mature MIR platform ready for innovations in the communications, sensing, health, food and safety sector.

Consortium (9)

Project Results (28)

Source: CORDIS, the EU research results database.

Publications (24)
Adaptive Epitaxy of C‐Si‐Ge‐Sn: Customizable Bulk and Quantum Structures
Advanced Materials· 2025DOI
Omar Concepción, Ambrishkumar J. Devaiya, Marvin H. Zoellner, Markus A. Schubert, Florian Bärwolf, Lukas Seidel, Vincent Reboud, Andreas T. Tiedemann, Jin‐Hee Bae, Alexei Tchelnokov, Qing‐Tai Zhao, Christopher A. Broderick, Michael Oehme, Giovanni Capellini, Detlev Grützmacher, Dan Buca
An assessment of germane and tin tetrachloride for GeSn epitaxy
Journal of Crystal Growth· 2025DOI
J.M. Hartmann, T. Marion
CW electrically pumped GeSn/SiGeSn MQW lasers
2025 IEEE Silicon Photonics Conference (SiPhotonics)· 2025DOI
O. Concepción, L. Seidel, T. Liu, G. Capellini, M. Oehme, D. Grützmacher, D. Buca
Direct Bandgap Ge<sub>0.846</sub>Sn<sub>0.154</sub> Photodiodes for Gas Sensing in the Mid-Wave Infrared
IEEE Journal of Selected Topics in Quantum Electronics· 2025DOI
Clément Cardoux, Lara Casiez, Eric Kroemer, Marvin Frauenrath, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Jean-Michel Hartmann, Olivier Lartigue, Christophe Constancias, Pierre Barritault, Nicolas Coudurier, Philippe Rodriguez, Aurélie Vandeneynde, Philippe Grosse, Olivier Gravrand, Alexei Chelnokov, Vincent Reboud
Dynamics of thermal-induced Sn segregation in GeSn at the nanometer scale
Journal of Alloys and Compounds· 2025DOI
Jaime Segura-Ruiz, Valentina Bonino, Martin Rosenthal, Nicolas Pauc, Vincent Calvo, Marvin Frauenrath, Clement Cardoux, Jean-Michel Hartmann, Alexei Chelnokov, Vincent Reboud
IEEE Journal on Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics· 2025DOI
Teren Liu; Lukas Seidel; Omar Concepción; Vincent Reboud; Alexei Chelnokov; Giovanni Capellini; Michael Oehme; Detlev Grützmacher; Dan Buca
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization
IEEE Transactions on Electron Devices· 2025DOI
Nicolas Coudurier, Andrea Quintero, Robin Pellerin, Maël Robin, Jean-Michel Hartmann, Vincent Reboud, Philippe Rodriguez
Luminescence properties of GeSn laser materials: Influence of buffered substrates
Journal of Applied Physics· 2025DOI
Martin Aagaard, Omar Concepción, Dan Buca, Zoran Ikonic, Brian Julsgaard
On demand control of the strain state in Ge-GeSn microbridges
Silicon Photonics XX· 2025DOI
Antoine Bard, Vincent Calvo, Vincent Reboud, Gwenael Le Rhun, Jean-Michel Hartmann, Nicolas Pauc
Advances in GeSn alloys for MIR applications
Photonics and Nanostructures - Fundamentals and Applications· 2024DOI
V. Reboud, O. Concepción, W. Du, M. El Kurdi, J.M. Hartmann, Z. Ikonic, S. Assali, N. Pauc, V. Calvo, C. Cardoux, E. Kroemer, N. Coudurier, P. Rodriguez, S.-Q. Yu, D. Buca, A. Chelnokov
Enhancing the Detectivity of Direct Bandgap Ge<sub>0.86</sub>Sn<sub>0.14</sub> Photodiodes by Layer Transfer
2024 IEEE Silicon Photonics Conference (SiPhotonics)· 2024DOI
C. Cardoux, E. Kroemer, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, S. Assali, J.M. Hartmann, N. Coudurier, P. Rodriguez, J. Chrétien, J. Widiez, O. Gravrand, A. Chelnokov, V. Reboud
Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
Materials Science in Semiconductor Processing· 2024DOI
L. Casiez, C. Cardoux, P. Acosta Alba, N. Bernier, J. Richy, N. Pauc, V. Calvo, N. Coudurier, P. Rodriguez, O. Concepción, D. Buca, M. Frauenrath, J.M. Hartmann, A. Chelnokov, V. Reboud
Innovative Annealing Technology for Thermally Stable Ni(GeSn) Alloys
2023 21st International Workshop on Junction Technology (IWJT)· 2024DOI
Andrea Quintero, Pablo Acosta Alba, Jean-Michel Hartmann, Patrice Gergaud, Vincent Reboud, Philippe Rodriguez
Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm
IEEE Journal of Selected Topics in Quantum Electronics· 2024DOI
Lorenzo Finazzi, Raffaele Giani, Omar Concepción, Dan Buca, Vincent Reboud, Giovanni Isella, Alberto Tosi
Nature Communications
Nature Communications· 2024DOI
Lukas Seidel; Teren Liu; Omar Concepción; Bahareh Marzban; Vivien Kiyek; Davide Spirito; Daniel Schwarz; Aimen Benkhelifa; Jörg Schulze; Zoran Ikonic; Jean-Michel Hartmann; Alexei Chelnokov; Jeremy Witzens; Giovanni Capellini; Michael Oehme; Detlev Grützmacher; Dan Buca
Phase‐Coherent Transport in GeSn Alloys on Si
Advanced Electronic Materials· 2024DOI
Prateek Kaul; Omar Concepción; Daan H. Wielens; Patrick Zellekens; Chuan Li; Zoran Ikonic; Koji Ishibashi; Qing‐Tai Zhao; Alexander Brinkman; Detlev Grützmacher; Dan Buca
Photonic ge-based platforms for mid-infrared applications
Photoniques· 2024DOI
Reboud, V.; Hartmann, J. M.; Serna, S.; Stoll, K.; Monat, C.; Grillet, C.
Room Temperature Lattice Thermal Conductivity of GeSn Alloys
ACS Applied Energy Materials· 2024DOI
Omar Concepción, Jhonny Tiscareño-Ramírez, Ada Angela Chimienti, Thomas Classen, Agnieszka Anna Corley-Wiciak, Andrea Tomadin, Davide Spirito, Dario Pisignano, Patrizio Graziosi, Zoran Ikonic, Qing Tai Zhao, Detlev Grützmacher, Giovanni Capellini, Stefano Roddaro, Michele Virgilio, Dan Buca
Spin Pumping in Epitaxial Ge<sub>1‐x</sub>Sn<sub>x</sub> Alloys
Advanced Quantum Technologies· 2024DOI
Emanuele Longo; Omar Concepción; Roberto Mantovan; Marco Fanciulli; Maksym Myronov; Emiliano Bonera; Jacopo Pedrini; Dan Buca; Fabio Pezzoli
Toward thermally stable Ni(GeSn) contacts using pre-amorphization by implantation or nanosecond laser annealing
MRS Advances· 2024DOI
Andrea Quintero; Marianne Coig; Frédéric Mazen; Pablo Acosta-Alba; Jean-Michel Hartmann; Patrice Gergaud; Vincent Reboud; Philippe Rodriguez
Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry
Materials Science in Semiconductor Processing· 2023DOI
J.M. Hartmann, T. Marion
Isothermal Heteroepitaxy of Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Structures for Electronic and Photonic Applications
ACS Applied Electronic Materials· 2023DOI
Omar Concepción, Nicolaj B. Søgaard, Jin-Hee Bae, Yuji Yamamoto, Andreas T. Tiedemann, Zoran Ikonic, Giovanni Capellini, Qing-Tai Zhao, Detlev Grützmacher, Dan Buca
Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys
IEEE Journal of the Electron Devices Society· 2023DOI
Andrea Quintero, Pablo Acosta Alba, Jean-Michel Hartmann, David Cooper, Patrice Gergaud, Vincent Reboud, Philippe Rodriguez
GeSn quantum wells as a platform for spin-resolved hole transport
Communications MaterialsDOI
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del-Vecchio, P., Concepción, O., Ikonić, Z., Gruẗzmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., Buca, D
Deliverables (3)
Data Management Plan
Documents, reports
Other Results (1)
Periodic Reporting for period 2 - LASTSTEP (group-IV LASer and deTectors on Si-TEchnology Platform)