AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids

HORIZON.2.5HORIZON-IAID: 101075709
EC Contribution
€32,424
Consortium Size
14 orgs
Summary

For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost.In the view of this situation, the objective of AdvanSiC is to produce, test and validate cost-effective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter.The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level.The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.

Consortium (14)

Project Results (11)

Source: CORDIS, the EU research results database.

Publications (7)
3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance
IEEE Transactions on Electron Devices· 2024DOI
Kyrylo Melnyk, Arne Benjamin Renz, Qinze Cao, Peter Michael Gammon, Neophytos Lophitis, Luca Maresca, Andrea Irace, Iulian Nistor, Munaf Rahimo, Marina Antoniou
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses
Materials· 2024DOI
Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte
Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
· 2024DOI
Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti, Mario S. Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices
· 2024DOI
Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos, Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina
Epitaxial trench refill of 4H-SiC by chlorinated chemistry
Appl. Phys. Lett.· 2024DOI
Gerard Colston; Kelly Turner; Arne Renz; Peter Gammon; Marina Antoniou; Philip A. Mawby; Vishal A. Shah
Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances
· 2023DOI
Almpanis, Ioannis; Evans, Paul; Li, Ke; Lophitis, Neophytos
Robust and area efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR termination designs and analysis
IEEE Energy Conversion Congress and Exposition, ECCE· 2023DOI
Melnyk, Kyrylo, Gammon, Peter M., Renz, Arne Benjamin, Cao, Quize, Lophitis, Neophytos and Antoniou, Marina
Other Results (1)
Periodic Reporting for period 1 - AdvanSiC (AdvanSiC - Advances in Cost-Effective HV SiC Power Devices for Europe’s Medium Voltage Grids)
Deliverables (3)