Smart Sensor Analog Front-End powered by Emerging Reconfigurable Devices

Digital, Industry & SpaceHORIZON-RIAID: 101135316
EC Contribution
โ‚ฌ39,136
Consortium Size
9 orgs
Start Year
2024
โ–ถSummary

Our main objective is the development of a reconfigurable platform to accommodate both for a generic sensor interface as well as a dedicated sensor transducer element. The tunable analog front-end (AFE) interface should be enabled at the fine-grain level by emerging reconfigurable field effect transistor (RFET) and negative differential resistance (NDR) transistor technologies that provide co-integration capabilities with European 22nm CMOS processing technologies allowing for a More-than-Moore sensor technology approach. Being doping-free these two key enabling technologies provide a high potential gain for a large variety of sensor system requiring a low 1/f noise behavior ranging from solid-state sensors, such as photodiodes, to environmental monitoring for the automotive market, and physiological signal monitoring, such as cancer detection. Having naturally un-gated channel areas, reconfigurable field effect transistors are the perfect target vehicle for functionalized surfaces, e.g. for the detection of colorectal cancer (CRC) biomarkers, serving as a Reconfigurable Sensor Transducer (RST) for the healthcare sector. Together with the AFE, these transducers can be integrated into a CMOS as a use-case demonstration of the flexible platform. To sum up, in SENSOTERIC we will investigate smart sensing solutions in environmental monitoring and healthcare, where both the RST and the AFE utilize the capabilities of emerging RFET and NDR key enabling technologies.

Consortium (9)

Project Results (14)

Source: CORDIS, the EU research results database.

โ–ถPublications (6)
Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors
IEEE Transactions on Electron Devicesยท 2025DOI
A. Fuchsberger, A. Verdianu, L. Wind, D. Nazzari, Enrique Prado Navarrete, C. Wilfingseder, J. Aberl, M. Brehm, J-M. Hartmann, M. Sistani, W. M. Weber
Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers
IEEE Transactions on Electron Devicesยท 2025DOI
Andreas Fuchsberger, Alexandra Dobler, Lukas Wind, Andreas Kramer, Julian Kulenkampff, Maximilian Reuter, Daniele Nazzari, Giulio Galderisi, Enrique Prado Navarrete, Johannes Aberl, Moritz Brehm, Thomas Mikolajick, Jens Trommer, Klaus Hofmann, Masiar Sistani, Walter M. Weber
Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms
Solid-State Electronicsยท 2025DOI
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Jean-Michel Hartmann, Frank Fournel, Lilian Vogl, Peter Schweizer, Andrew M. Minor, Masiar Sistani, Walter M. Weber
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance
IEEE Journal of the Electron Devices Societyยท 2024DOI
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Alexandra Dobler, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors
IEEE Transactions on Electron Devicesยท 2024DOI
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Enrique Prado Navarrete, Johannes Aberl, Moritz Brehm, Masiar Sistani, Walter M. Weber
Roadmap for Schottky barrier transistors
Nano Futuresยท 2024DOI
Eva Bestelink, Giulio Galderisi, Patryk Golec, Yi Han, Benjamin Iniguez, Alexander Kloes, Joachim Knoch, Hiroyuki Matsui, Thomas Mikolajick, Kham M Niang, Benjamin Richstein, Mike Schwarz, Masiar Sistani, Radu A Sporea, Jens Trommer, Walter M Weber, Qing-Tai Zhao, Laurie E Calvet
โ–ถDeliverables (8)