Sustainable Indium Phosphide (InP) platform and ecosystem upscaling, enabling future mass market (sub-)THz applications

Digital, Industry & SpaceHORIZON-JU-RIAID: 101139842
EC Contribution
€119,637
Consortium Size
28 orgs
Start Year
2024
Summary

Electronic devices evolved significantly, fuelling the digital transformation towards a connected society. To growing need for performance, speed and efficiency pushes wireless applications to operate at sub-THz frequencies and beyond. Today’s technologies, however, come short to efficiently and effectively utilize these frequencies, even taking into account technological evolutions. A disruptive yet commercially viable technology is urgently needed. Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance. Today, InP is only adopted in niche markets because of its costly and scarce substrates. Move2THz will transform the InP platform and build a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing.To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education.Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.

Consortium (28)

Project Results (17)

Source: CORDIS, the EU research results database.

Publications (16)
Fabrication and development of InP HEMTs on silicon substrate based on a new integration technique
2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)· 2026DOI
Francesco Fortunato, Nelson Rebelo, Claire Besancon, Florence Martin, Bruno Ghyselen, Jean Decobert, Johan Bergsten, Helena Rodilla
Benefits of On-wafer Calibration for RF Characterization of InP DHBT Technology Devices
GDR_SOC2 Conference· 2025DOI
Cisse Moussa, Davy Nil, Nodjiadjim Virginie, Ardouin Bertrand, Mismer Colin, Maneux Cristell, Marc François, and Deng Marina.
High-Efficiency >110-GHz-Bandwidth 4-Vppd InP-DHBT Linear Modulator Driver for Beyond-200-GBd Optical Transceivers
2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)· 2025DOI
R. Hersent, F. Blache, F. Jorge, V. Nodjiadjim, N. Davy, C. Mismer, M. Riet, L. Iotti, A. Rylyakov, A. Konczykowska, B. Ardouin
InP DHBT AMUX Integrated Circuits for Beyond-200-Gbaud Optical Communications
2025 IEEE Photonics Society Summer Topicals Meeting Series (SUM)· 2025DOI
Romain Hersent, Qian Hu, Agnieszka Konczykowska, Mohand Achouche, Bertrand Ardouin
n+ Doped In<sub>0.53</sub>Ga<sub>0.47</sub>As Using Di‐Tert‐Butylsilane in a Vertical MOVPE Reactor
physica status solidi (a)· 2025DOI
Alexander Possberg, Fabian van Essen, Hao Zhang, Jonas Watermann, Jonathan Abts, Jan Ebbert, Konrad Mueller, Patrick Häuser, Lisa Liborius, Nils Weimann
Thermal strain management of III–V heterostructures grown on InP-on-silicon (InPoSi) substrates
Journal of Applied Physics· 2025DOI
C. Besancon, F. Martin, B. Ghyselen, L. Largeau, F. Fournel, L. Sanchez, T. Bria, O. Mourey, C. Navone, J. Decobert
 Appendix InP on Si Technologies for Next-Generation Optical Communication High-speed Analog Front-Ends
Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664· 2024DOI
Romain Hersent
A CMOS Compatible III-V-on-300 mm Si Technology for Future High-speed Communication Systems: and Possibilities
Key enabling technologies for future wireless, wired, optical and satcom applications· 2024DOI
A. Vais, A. Kumar, G. Boccardi, S. Yadav, Y. Mols, R. Alcotte, B. Vermeersch, M. Ingels, U. Peralagu, C. Roda Neve, B. Ghyselen, B. Parvais, P. Wambacq, B. Kunert, N. Collaert
Advanced Substrate Technologies for Sub-THz Era
Key enabling technologies for future wireless, wired, optical and satcom applications· 2024DOI
François Brunier
B55X: A SHIFT in STMicroelectronics BiCMOS Technologies
Key enabling technologies for future wireless, wired, optical and satcom applications· 2024DOI
P. Chevalier, A. Gauthier, N. Guitard, V. Milon, F. Monsieur, N. Denier, C. Deglise-Favre, D. Céli, C. Durand, O. Foissey, F. Sonnerat, F. Gianesello, D. Gloria
Challenges for 2.5D and 3D Integration of InP HBT Technology
Key enabling technologies for future wireless, wired, optical and satcom applications ISBN: 9788770046664· 2024DOI
Bertrand Ardouin; Tom K. Johansen; Antoine Chauvet; Romain Hersent; Virginie Nodjiadjim; Agnieszka Konczykowska; Nil Davy; Muriel Riet; Colin Mismer
Heterointegration Approaches for InP-HBT Technologies for 5G Applications and Beyond
· 2024
Hady Yacoub
InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modeling up to 500 GHz
IEEE Transactions on Electron Devices· 2024DOI
Marina Deng, Chhandak Mukherjee, Lucas Réveil, Akshay M. Arabhavi, Sara Hamzeloui, Colombo R. Bolognesi, Magali De Matos, Cristell Maneux
Key enabling technologies for future wireless, wired, optical and satcom applications
· 2024DOI
Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquiere, Pierre Busson, Urtė Steikūnienė
RF Technology Roadmap for 5G and 6G RF Front-end Systems
Key enabling technologies for future wireless, wired, optical and satcom applications· 2024DOI
Yvan Morandini
SiGe BiCMOS & III-V Technologies Heterogeneous Integration Challenges
Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications· 2024DOI
Frederic Gianesello
Deliverables (1)