300 Mm sSOI engineering with ultra thin buried oxide
Solid-State Electronics· 2026DOI D. Barge; M. Gallard; J.-M. Hartmann; F. Fournel; V. Loup; F. Mazen; E. Nolot; P. Hauchecorne; J. Sturm; V.H. Le; I. Huyet; D. Delprat; F. Boedt; F. Servant
Investigation of compliance current effect on resistive switching properties in Ag/SiOx/Cr RRAM devices
Solid-State Electronics· 2026DOI Piotr Wiśniewski, Piotr Jeżak, Aleksander Małkowski, Alicja Kądziela, Jakub Krzemiński, Robert Mroczyński
Modeling of RRAM based PUF: a case study
Solid-State Electronics· 2026DOI Kamil Ber, Piotr Wiśniewski
Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications
Solid-State Electronics· 2026DOI C. Fenouillet-Beranger; O. Rozeau; R. Chouk; O. Cueto; A-S. Royet; M. Charbonneau; B. Mohamad; L. Brévard; Z. Chalupa; A. Bond; F. Baudin; L. Brunet; P. Rodriguez; R. Gassilloud; T. Mota-Frutuoso; P. Pimenta-Barros; S. Beaurepaire; V. Lapras; J. Kanyandekwe; E. Petitprez; P. Brianceau; R. Segaud; null S.Verrun; D. Barge; P. Chausse; O. Billoint; W. Vandendaele; K. Romanjek; V. Loup; J-M. Hartmann; A. Magalhaes-Lucas; G. Garnier; A. Souhaité; G. Cibrario; B. Duriez; T. Poiroux; M-C. Cyrille; D. Noguet
Bayesian continual learning and forgetting in neural networks
Nature Communications· 2025DOI Djohan Bonnet, Kellian Cottart, Tifenn Hirtzlin, Tarcisius Januel, Thomas Dalgaty, Elisa Vianello, Damien Querlioz
Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)· 2025DOI D. Bosch, A. Viey, T. Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, L. Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. G
Dual-Mode Wideband Receiver Operating with Frequency Modulated Impulse Radar Waveform
2025 IEEE Radar Conference (RadarConf25)· 2025DOI Mykhailo Zarudniev; Laurent Ouvry; Gilles Masson; Arthur Paviot; Cedric Dehos; Pierre Courouve; David Lachartre
Europe’s pilot line on fully depleted silicon-on-insulator technology (FAMES)
Nature Reviews Electrical Engineering· 2025DOI Jean-René Lèquepeys, Dominique Noguet, Bruno Paing, Xavier Lemoine, Christophe Wyon, Marie-Claire Cyrille, Claire Fenouillet-Béranger, Eric Dupont-Nivet, Chrystel Deguet, Susana Bonnetier
First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)· 2025DOI J. Lugo-Alvarez, J.B. David, A. Siligaris, V. Puyal, G. Moritz, T. Mota-Frutuoso, V. Lapras, C. Fenouillet-Beranger, L. Brunet, P. Vincent, D. Lattard, X. Garros, F. Andrieu, P. Batude
High Performance 2.5V n&p 400°C SOI MOSFETs: a Breakthrough for versatile 3D Sequential Integration
2025 IEEE International Electron Devices Meeting (IEDM)· 2025DOI D. Bosch, W. Vandendaele, E-A Diallo, A-S Royet, A. Albouy, M. Opprecht, F-X Darras, V. Benevent, P. Maillard, O. Adami, M. Ribotta, S. Kerdilès, R. Gassilloud, X. Garros, P. Batude
Influence of Dopant and Si:B Cap on Ni(Pt)-Based Silicidation of SiGe:B for Next Generation PMOS FDSOI Devices
2025 22nd International Workshop on Junction Technology (IWJT)· 2025DOI Helen Grampeix; Théo Cabaret; Justine Lespiaux; Patrice Gergaud; Nicolas Gauthier; Philippe Rodriguez
Ising-inspired invertible adders using coupled phase-locked CMOS ring oscillators
Physical Review Applied· 2025DOI Ali Bazzi, Hugo Levices, Philippe Talatchian, Franck Badets, Louis Hutin
ITO Contact Optimization for Enhancement Mode BEOL MOSFETs
2025 Device Research Conference (DRC)· 2025DOI Karl-Magnus Persson, Patrik Eskelinen, Oscar Kaatranen, Olli-Pekka Kilpi
Nanoscale SOI strain engineering: STRASS-enabled local stress optimization
Solid-State Electronics· 2025DOI L.D. Mohgouk Zouknak; V-H. Le; N-P. Tran; F. Milesi; J.-M. Hartmann; S. Jarjayes; J. Lespiaux; A. Jannaud; F. Aussenac; N. Bernier; Ph. Rodriguez; L. Brunet; B. Duriez; M.C. Cyrille; C. Fenouillet-Beranger
On the Enhanced p‐Type Performance of Back‐Gated WS<sub>2</sub> Devices
Advanced Electronic Materials· 2025DOI Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz
Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs
Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Toward full relaxation of sSOI substrates for PFET device fabrication
Solid-State Electronics· 2025DOI N-P. Tran; F. Milesi; V-H. Le; L-D. Mohgouk Zouknak; P. Dezest; Ph. Rodriguez; L. Brunet; B. Duriez; M-C. Cyrille; C. Fenouillet-Beranger
Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design
2025 IEEE 28th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS)· 2025DOI Claire Fenouillet-Beranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudoin Martineau, Marie-Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet
Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS<sub>2</sub> Devices Enabled by Plasma-Enhanced Atomic Layer Deposition
ACS Applied Materials & Interfaces· 2025DOI Alberto Martínez; Carlos Márquez; Francisco Lorenzo; Francisco Gutiérrez; Manuel Caño-García; Jorge Ávila; José Carlos Galdón Gil; Ruben Ortega Lopez; Carlos Navarro; Luca Donetti; Francisco Gámiz
Wafer‐Scale Demonstration of Polycrystalline MoS<sub>2</sub> Growth on 200 mm Glass and SiO<sub>2</sub>/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition
Advanced Materials Technologies· 2025DOI Julia Jagosz, Leander Willeke, Nils Gerke, Malte J. M. J. Becher, Paul Plate, Aleksander Kostka, Detlef Rogalla, Andreas Ostendorf, Claudia Bock
Analysis of the key parameters of box creep process for advanced FDSOI devices
2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)· 2024DOI Sylvie Jarjayes, Laurent Brunet, Philippe Rodriguez
Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)· 2024DOI A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Comparative study of ALD MoS<sub>2</sub> on high-k dielectrics for the fabrication of nanowire FETs
2024 IEEE European Solid-State Electronics Research Conference (ESSERC)· 2024DOI M. Rodriguez-Fano, J.M. Pedini, S. Cadot, H. Grampeix, T. Magis, F. Laulagnet, R. Souil, S. Barraud
DTCO of advanced FDSOI CMOS technology by process emulation
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)· 2024DOI Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
ECS Transactions· 2024DOI Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices
ECS Transactions· 2024DOI Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films
· 2024
H. Grampeix